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activated hydrogen for fluxless reflow for wafer level packaging-2024欧洲杯官网

proprietary, patented innovation for wafer level packaging applications, including wafer bump and copper pillar reflow

building on our 25 years of proprietary and patented innovation for the global electronics packaging industry, air products has developed the electron attachment (ea) technology, a novel flux-free soldering technology that uses activated hydrogen at ambient pressure with a starting temperature as low as 100° c to remove metal oxides from electroplated solder bumps on semiconductor wafers and permit reflow of these bumps to obtain the proper shape and size for interconnection onto a package or substrate.

electron attachment (ea) technology benefits

ea technology for hydrogen activation offers the following benefits for wafer bump reflow:

  • enhances bump reflow quality (no flux-induced solder voids and wafer contaminations)
  • improves productivity (in-line process, no need for post wafer cleaning and furnace down time cleaning)
  • reduces cost of ownership (no need for cleaning equipment, solution, labor work, and flux)
  • improves safety (no flux exposure, using a non-toxic and non-flammable gas mixture) 
  • reduces environmental issues (no organic vapors, hazard residues, and co2 emission)

fluxless soldering using electron attachment (ea) technology

proprietary, patented innovation for wafer level packaging applications
the ea up 1200 electron attachment fluxless reflow furnace system developed by air products and our equipment partner sikama international.

electron attachment (ea) fluxless reflow system

air products has partnered with sikama international to introduce an electron attachment fluxless reflow system (eaup1200) to the electronics wafer level packaging segment. the furnace is designed to remove metal oxides from solder bumps on ubm wafers and solder caps from copper pillar wafers via the ea technology. the activated hydrogen produces hydrogen anions, which induces reflow of the solder to a final shape in the absence of traditional flux processes.

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